کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1554726 998803 2009 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of the intense laser field on the valance band for Ga1−xAlxAs/GaAs heterostructure
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Effect of the intense laser field on the valance band for Ga1−xAlxAs/GaAs heterostructure
چکیده انگلیسی
The energy levels of holes in symmetric single quantum well under the laser field are theoretically calculated within the framework of the effective mass approximation. Results obtained show that the potential profile and energy levels can significantly be modified and controlled by intense laser field and the well width. The effect of the laser field and the well width on the energy difference changes the degree of the confinement, and thus this behavior can be used to study these systems in regions of interest, without the need for the growth of many different samples.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 45, Issue 1, January 2009, Pages 16-21
نویسندگان
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