MBE growth of ZnSe nanowires on oxidized silicon substrate

We report the growth of single crystalline ZnSe nanowires on oxidized Si(100) substrates by molecular-beam epitaxy using Au nano-particles as the catalysts. It was found that average length decreased while the average diameter increased as we increased the temperature from 230 to 320 ∘C. It was also found that crystal quality of the ZnSe nanowires prepared at 320 ∘C was poorer than the ZnSe nanowires prepared at 230 ∘C and 280 ∘C.