کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1554781 | 998807 | 2009 | 7 صفحه PDF | دانلود رایگان |

We investigate the effect of a 100 nm-thick NiZn alloy (10 wt% Zn) capping layer on the thermal and electrical properties of Ag reflectors (200 nm) for flip-chip light-emitting diodes (LEDs). It is shown that the introduction of the NiZn capping layer minimizes the formation of interfacial voids and surface agglomeration. Furthermore, LEDs fabricated with the NiZn-capping-layer-combined contacts produce better output power as compared to those with the Ag only reflectors. For example, the LEDs with the 400 ∘C-annealed Ag/NiZn contacts give higher output power by ∼36% than those with the 400 ∘C-annealed Ag only contacts. X-ray photoemission spectroscopy and Auger electron spectroscopy measurements are performed to understand the improved electrical properties of the LEDs fabricated with the NiZn-capping-layer-combined Ag contacts.
Journal: Superlattices and Microstructures - Volume 46, Issue 4, October 2009, Pages 578–584