Magnetic nanostructures for local spin control in semiconductors

We present two approaches to achieve a pronounced remanent out-of-plane magnetization in ferromagnetic nanostructures: Ni nanomagnets with high aspect ratios and Fe/Tb multilayer structures with strong interface anisotropy were defined by electron beam lithography and fabricated by electrochemical deposition and UHV evaporation, respectively. Both technologies allow a local spin control in an underlying semiconductor via the magnetic fringe field.