کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1554827 | 998809 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
AlGaN/GaN heterostructure grown on 1â -tilt sapphire substrate by MOCVD
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
AlGaN/GaN epitaxial layers were grown on 0â-tilt and 1â-tilt sapphire substrates by metalorganic chemical vapor deposition (MOCVD). With exactly the same growth conditions, it was found that dislocation density was smaller and crystal quality was better for the AlGaN/GaN epitaxial layers prepared on 1â-tilt sapphire substrate. We also found that AlGaN/GaN epitaxial layers on 1â-tilt sapphire substrate were grown with step growth mode while those on 0â-tilt substrate were grown with two-dimensional island growth. From the temperature-dependent mobility, it was found that crystal quality of the AlGaN/GaN epitaxial layer prepared on 1â-tilt sapphire substrate is better.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 43, Issue 3, March 2008, Pages 147-152
Journal: Superlattices and Microstructures - Volume 43, Issue 3, March 2008, Pages 147-152
نویسندگان
K.T. Lam, C.L. Yu, P.C. Chang, U.H. Liaw, S.J. Chang, J.C. Lin,