کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1554829 | 998809 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The effect of a surface layer capping p-InGaN/p-GaN superlattices on the contact to p-GaN
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The effect of a surface layer capping p-InGaN/p-GaN superlattices on the contact to p-GaN The effect of a surface layer capping p-InGaN/p-GaN superlattices on the contact to p-GaN](/preview/png/1554829.png)
چکیده انگلیسی
In this study, the influence of the surface layer (p-InGaN or p-GaN) capping p-InGaN/p-GaN superlattices (SLs) on the contact to p-type GaN was investigated. It was found that the specific contact resistance (ρc)(ρc) to p-type GaN is lower when using p-InGaN as the surface layer. The lowest value of ρcρc was 1.99×10−4 Ω cm2 at room temperature. It was also found that low temperature growth of the p-GaN layers in the SLs is beneficial for lowering the ohmic contact resistance. Unlike Ni/Au deposited directly on p-GaN (without the strained p-InGaN/p-GaN SLs), Ni/Au deposited on p-InGaN/p-GaN SLs produces ohmic behavior even before annealing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 43, Issue 3, March 2008, Pages 162–167
Journal: Superlattices and Microstructures - Volume 43, Issue 3, March 2008, Pages 162–167
نویسندگان
Yian Yin, Baolin Liu, Baoping Zhang, Guoxing Lin,