کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1554837 | 998809 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth and characterization of pine-needle-shaped GaN nanorods by sputtering and ammoniating process
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth and characterization of pine-needle-shaped GaN nanorods by sputtering and ammoniating process Growth and characterization of pine-needle-shaped GaN nanorods by sputtering and ammoniating process](/preview/png/1554837.png)
چکیده انگلیسی
Pine-needle-shaped GaN nanorods have been successfully synthesized on Si(111) substrates by ammoniating Ga2O3/Nb films at 950 ∘C in a quartz tube. The products are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and field-emission transmission electron microscope (FETEM). The results show that the pine-needle-shaped nanorods have a pure hexagonal GaN wurtzite with a diameter ranging from 100 to 200 nm and a length up to several microns. The photoluminescence spectra (PL) measured at room temperature only exhibit a strong emission peak at 368 nm. Finally, the growth mechanism of GaN nanorods is also briefly explored.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 43, Issue 3, March 2008, Pages 262–267
Journal: Superlattices and Microstructures - Volume 43, Issue 3, March 2008, Pages 262–267
نویسندگان
Bao-li Li, Hui-zhao Zhuang, Cheng-shan Xue, Shi-ying Zhang,