کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1554864 1513253 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Exciton warming in III-V semiconductors and microcavities
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Exciton warming in III-V semiconductors and microcavities
چکیده انگلیسی
We present a time resolved experiment in which we dynamically tailor the occupation and temperature of a photogenerated exciton distribution in QWs by excitation with two delayed picosecond pulses. The modification of the excitonic distribution results in ultrafast changes in the PL dynamics. Our experimental results are well accounted by a quasiequilibrium thermodynamical model, which includes the occupation and momentum distribution of the excitons. We use this model and the two-pulse experimental technique to study the polariton dynamics in InGaAs-based microcavities in the strong coupling regime. In particular, we demonstrate that resonantly injected upper polaritons mainly relax to the lower polariton branch via scattering to large momentum polariton states, producing the warming of the polariton reservoir.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 43, Issues 5–6, May–June 2008, Pages 449-453
نویسندگان
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