کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1554886 1513253 2008 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Optical-field profiles in InxGa1−xN -MQW laser structures
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Optical-field profiles in InxGa1−xN -MQW laser structures
چکیده انگلیسی

In this paper, we calculated the optical fields for InxGa1−xN-multiquantum well (MQW) laser structures. Two different optical cavities are compared, the conventional step separate confinement heterostructure (Step) and a graded-index (GRIN) structure with a parabolic variation of the Al content in the AlxGa1−xN guide layers. A comparison is made regarding the confinement factor, near- and far-field patterns. An anomalous behavior for the confinement factor is observed in the structure, and it can be eliminated by choosing an appropriated combination of the layer’s thicknesses forming the waveguide. For AlxGa1−xN, an improved expression for the refractive index is presented, which shows better agreement with experimental data than previously reported expressions.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 43, Issues 5–6, May–June 2008, Pages 575–581
نویسندگان
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