کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1554887 1513253 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Competition between carrier recombination and tunneling in quantum dots and rings under the action of electric fields
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Competition between carrier recombination and tunneling in quantum dots and rings under the action of electric fields
چکیده انگلیسی
In the presence of a stationary electric field applied in the growth direction tunneling of electrons out of the quantum dots can take place. This mechanism competes with the quantum confined Stark effect (QCSE) that produces an increase of the exciton lifetime by increasing the electric field, mainly due to a net decrease of the electron-hole wavefunction overlap. The electric field range where QCSE dominates over tunneling will be mainly determined by the size of the nanostructure along the vertical direction (height), as demonstrated in this work.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 43, Issues 5–6, May–June 2008, Pages 582-587
نویسندگان
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