کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1554891 | 1513253 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Time-resolved spectroscopy of freestanding GaN layers grown by halide vapour phase epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
Freestanding GaN layers of various thicknesses grown by HVPE have been studied by time-resolved spectroscopy combined with structural and electrical measurements. We have observed an increase of the PL lifetime with increasing layer thickness; however, a saturation of the recombination times has been detected for the GaN layers thicker than 400 μm. We explain the observed thickness-dependent behavior of the decay times by competition of two nonradiative mechanisms; namely, for layers with thickness less than 400 μm the main nonradiative channel is related to the structural defects, while in thicker layers the recombination decay time is limited by impurities and/or vacancies.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 43, Issues 5â6, MayâJune 2008, Pages 605-609
Journal: Superlattices and Microstructures - Volume 43, Issues 5â6, MayâJune 2008, Pages 605-609
نویسندگان
G. Pozina, C.G. Hemmingsson, J.P. Bergman, D. Trinh, L. Hultman, B. Monemar,