کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1554894 | 1513253 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Spin resonance spectroscopy of grown-in defects in Ga(In)NP alloys
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Spin resonance spectroscopy of grown-in defects in Ga(In)NP alloys Spin resonance spectroscopy of grown-in defects in Ga(In)NP alloys](/preview/png/1554894.png)
چکیده انگلیسی
We employ the optically detected magnetic resonance (ODMR) technique to study and identify important grown-in defects in Ga(In)NP grown by molecular-beam epitaxy (MBE). Several types of defects were revealed from ODMR studies. The dominant defects were found to be related to Ga interstitials, evident form their characteristic hyperfine interaction arising from the spin interaction between the electron and the Ga nucleus. Some other as yet unidentified intrinsic defects were also found to be commonly present in the alloys. The effects of growth conditions (ion bombardment, N2 gas flow, etc.) and post-growth rapid thermal annealing on the formation of these defects were studied in detail, shedding light on the formation mechanism of defects.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 43, Issues 5â6, MayâJune 2008, Pages 620-625
Journal: Superlattices and Microstructures - Volume 43, Issues 5â6, MayâJune 2008, Pages 620-625
نویسندگان
D. Dagnelund, X.J. Wang, I.P. Vorona, I.A. Buyanova, W.M. Chen, A. Utsumi, Y. Furukawa, S. Moon, A. Wakahara, H. Yonezu,