کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1554905 | 998813 | 2006 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Magnetotunneling spectroscopy of a biased triple-barrier semiconductor heterostructure
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this work we describe a magnetotunneling spectroscopy technique for probing the localization degree of two-dimensional states and mapping the subbands in the active region of a resonant-tunneling semiconductor heterostructure. The reported experimental data consist of the low-temperature tunneling current traces of an asymmetric triple-barrier structure measured by sweeping an in-plane magnetic field up to 10Â T. According to our interpretation model, the main features observed in the tunnel current traces are due to the field-induced resonant transitions between two-dimensional states at the crossing region between dispersion curves. The data reveals the highly localized nature of the quantum states in an asymmetric double-quantum-well structure even for those with very narrow middle barriers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 40, Issue 1, July 2006, Pages 1-9
Journal: Superlattices and Microstructures - Volume 40, Issue 1, July 2006, Pages 1-9
نویسندگان
Rober Velásquez,