Energy band gaps for the GaxIn1−xAsyP1−y alloys lattice matched to different substrates

A pseudopotential formalism within the virtual crystal approximation in which the effects of composition disorder are involved is applied to the GaxIn1−xAsyP1−y quaternary alloys in conditions of lattice matching to GaAs, InP and ZnSe substrates so as to predict their energy band gaps. Very good agreement is obtained between the calculated values and the available experimental data for the alloy lattice matched to InP and GaAs. The alloy is found to be a direct-gap semiconductor for all yy compositions whatever the lattice matching to the substrates of interest. The (Γ→Γ)(Γ→Γ) band-gap ranges and the ionicity character are found to depend considerably on the particular lattice-matched substrates suggesting therefore that, for an appropriate choice of yy and the substrate, GaxIn1−xAsyP1−y could provide more diverse opportunities to obtain desired band gaps, which opens up the possibility of discovering new electronic devices with special features and properties.