Polariton emission in GaN microcavities

We present a detailed experimental study aimed at demonstrating the polariton nature of the photoluminescence emission in a bulk GaN microcavity grown on (111) silicon. The comparison of the photoluminescence with coincident reflectivity measurements at different temperatures shows an anticrossing behaviour with a Rabi splitting of the order of 35 meV up to room temperature. Relevant confirmations of the mixing between excitons and photons are found in the analysis of the spectral linewidth and of the time resolved kinetics.