کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1554982 | 998821 | 2009 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low-temperature direct wafer bonding of GaAs/InP
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
An approach for low-temperature direct wafer bonding of GaAs/InP was presented. The bonding procedure was carried out at temperatures from 350 to 500Â âC, and the bonded n-GaAs/n-InP specimens were obtained even at a temperature as low as 350Â âC. The compositional profile on the GaAs/InP heterointerface was studied by X-ray photoelectron spectroscopy. The bonded interfacial properties were also characterized by current-voltage (I-V) and bonding strength measurement. The experimental results revealed an InGaAsP (or/and InGaAs) interlayer formed at the bonded interface, which influences the electrical property as well as the bonding strength. For the specimen bonded at 350Â âC, the transport of major carriers could be explained by a tunneling effect. But the carrier transport was described by the thermionic emission theory for the specimen bonded at 450Â âC. Finally, the mechanism of GaAs/InP bonding was discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 45, Issue 2, February 2009, Pages 47-53
Journal: Superlattices and Microstructures - Volume 45, Issue 2, February 2009, Pages 47-53
نویسندگان
Sheng Xie, Songyan Chen, Weilian Guo, Luhong Mao,