کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1555001 | 1513252 | 2008 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photoluminescence of Ge nanocrystals self-assembled on SiO2
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Photoluminescence of Ge nanocrystals self-assembled on SiO2 Photoluminescence of Ge nanocrystals self-assembled on SiO2](/preview/png/1555001.png)
چکیده انگلیسی
Ge nanocrystals have been obtained from the dewetting process during thermal annealing of an amorphous Ge layer deposited by molecular beam epitaxy on a thin SiO2 layer on Si(001). The Ge nanocrystals were then capped with a thin layer of amorphous Si. The mean nanocrystal size-2.5-60 nm-depends on the initial Ge layer thickness. Low-temperature photoluminescence (PL) measurements were performed to investigate quantum confinement effects on the Ge nanocrystal energy gap and defect states. For the present range of particle sizes, the nanoparticle PL emission appeared as a wide near-infrared band near 900 meV although a weak confined band was also observed for the smallest nanoparticles. Further thermal annealing of the samples increased the interband recombination by nearly two orders of magnitude.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 44, Issues 4â5, OctoberâNovember 2008, Pages 305-314
Journal: Superlattices and Microstructures - Volume 44, Issues 4â5, OctoberâNovember 2008, Pages 305-314
نویسندگان
N.L. Rowell, D.J. Lockwood, A. Karmous, P.D. Szkutnik, I. Berbezier, A. Ronda,