Photocurrent generation from Ge nanodots in the near UV and visible region

The photocurrent generation of nanometric Ge droplets has been investigated by using electrochemical measurements. Dots have been grown by annealing Ge layers of different nominal thicknesses (ranging from 0.5 to 5 nm) deposited on clean SiO2 surface at room temperature. The photocurrent signals for the largest dots show features, which can be ascribed to the Ge nanocrystals direct electronic transitions. Only in the case of 0.5 nm Ge film a broad and intense feature at 2.4 eV has been observed while the peaks at higher energy result to be dramatically reduced. Since this last sample is characterized by (5±1) nm nanodots size (the smallest among the measured samples) the appearance of this broad band in the photocurrent active spectrum can be ascribed to quantum confinement effect.