Local anodic oxidation on dodecyl terminated silicon(100)

Nanolithography by local oxidation induced by scanning probe microscopy on dodecyl terminated silicon(100) has been carried out under ambient conditions and controlled humidity. A linear increase in the height of the formed oxide with the applied voltage and a logarithmic decrease with increasing writing velocity has been found. The amount of formed oxide could be described by a biexponential model indicating that a direct oxidation process dominates the oxidation while an indirect oxidation process is less pronounced compared to the oxidation of hydrogen terminated silicon [J.A. Dagata, F. Perez-Murano, C. Martin, H. Kuramochi, H. Yokoyama, J. Appl. Phys. 96 (2004) 2386].