کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1555059 998826 2006 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Design and fabrication of a SiGe double quantum well structure for g-factor tuning
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Design and fabrication of a SiGe double quantum well structure for g-factor tuning
چکیده انگلیسی
We propose a double quantum well device structure that allows for g-factor tuning by moving a two-dimensional electron gas between layers with different g-factors by applying a gate voltage. We present self-consistent model calculations showing that the electron wavefunction can be shifted almost completely in between the layers. We produced and characterized the double quantum well structure according the parameters from the optimum model calculations. First results are presented indicating that g-factor tuning really is possible within the envisioned device structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 39, Issue 5, May 2006, Pages 414-420
نویسندگان
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