کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1555072 | 998828 | 2008 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Density of impurity states of shallow donors in a quantum well under intense laser field
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Density of impurity states of shallow donors in a quantum well under intense laser field Density of impurity states of shallow donors in a quantum well under intense laser field](/preview/png/1555072.png)
چکیده انگلیسی
The density of donor impurity states in a square GaAs-AlGaAs quantum well under an intense laser field is calculated taking into account the laser dressing effects on both the Coulomb potential and the confining potential. Using the effective-mass approximation within a variational scheme, the donor binding energy is obtained as a function of the laser dressing parameter, and the impurity position. Our results point out that a proper consideration of the density of impurity states may be of relevance in the interpretation of the optical phenomena related to shallow impurities in quantum wells, where the effects of an intense laser field compete with the quantum confinement.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 44, Issue 2, August 2008, Pages 173-182
Journal: Superlattices and Microstructures - Volume 44, Issue 2, August 2008, Pages 173-182
نویسندگان
E.C. Niculescu, L.M. Burileanu, A. Radu,