The variation of electronic properties with the doping concentration of modulation-doped AlxGa1−xAs–GaAs double quantum wells

In this paper we have calculated the sub-band structure and the confinement potential of modulation-doped Ga1−xAlxAs–GaAs double quantum wells as a function of the doping concentration. The electronic properties of this structure were determined by self-consistent solutions of the Schrödinger and Poisson equations. To understand the effects of doping concentration on band bending, sub-band energies, and sub-band populations, the doping concentration on one right side of the structure is decreased while holding it constant on the left side. We found that at low doping concentrations on the right side, the effects of the doping concentration are more pronounced on band bending and sub-band populations.