کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1555120 | 1513254 | 2007 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of growth parameters on crystallinity and properties of ZnO films grown by plasma assisted MOCVD
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Thin films of ZnO have been grown by plasma assisted metal-organic chemical vapour deposition (PA-MOCVD) using a 13.56Â MHz O2 plasma and the Zn(TTA)2
- tmed (HTTA=2-thenoyltrifluoroacetone, TMED=N,N,Nâ²,Nâ²-tetramethylethylendiamine) precursor. The effects of growth parameters such as the plasma activation, the substrate, the surface temperature, and the ratio of fluxes of precursors on the structure, morphology, and optical and electrical properties of ZnO thin films have been studied. Under a very low plasma power of 20Â W, c-axis oriented hexagonal ZnO thin films are grown on hexagonal sapphire (0001), cubic Si(001) and amorphous quartz substrates. The substrate temperature mainly controls grain size.
- tmed (HTTA=2-thenoyltrifluoroacetone, TMED=N,N,Nâ²,Nâ²-tetramethylethylendiamine) precursor. The effects of growth parameters such as the plasma activation, the substrate, the surface temperature, and the ratio of fluxes of precursors on the structure, morphology, and optical and electrical properties of ZnO thin films have been studied. Under a very low plasma power of 20Â W, c-axis oriented hexagonal ZnO thin films are grown on hexagonal sapphire (0001), cubic Si(001) and amorphous quartz substrates. The substrate temperature mainly controls grain size.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 42, Issues 1â6, JulyâDecember 2007, Pages 40-46
Journal: Superlattices and Microstructures - Volume 42, Issues 1â6, JulyâDecember 2007, Pages 40-46
نویسندگان
M. Losurdo, M.M. Giangregorio, A. Sacchetti, P. Capezzuto, G. Bruno, G. Malandrino, I.L. Fragalà ,