Growth of wide band gap wurtzite ZnMgO layers on (0001) Al2O3 by radical-source molecular beam epitaxy

Wurtzite structure ZnMgO layers have been grown using radical-source molecular beam epitaxy on high-quality ZnO buffer layers grown on (0001) sapphire substrates. The thickness of the ZnO buffer layers is 300 nm, with full width at half maxim of the HR-XRD (0002) rocking curves as low as 25 arcsec. In-situ Reflection High-Energy Electron Diffraction (RHEED) was employed for the optimization of the ZnMgO growth. RHEED and X-Ray Diffractometry measurements did not reveal any phase change from the wurzite structure to the rocksalt structure. The C-lattice parameter of Zn1−xMgxO films decreased from 5.209 to 5.176 Å with increasing xx to 0.2. The surface morphology of the samples was studied with atomic force microscopy. The root mean square roughness values of 200 nm thick ZnMgO (x=0.2)(x=0.2) was less than 1 nm. The main photoluminescence peak of Zn1−xMgxO shifted to as high as 3.77 eV owing to the increasing Mg composition of up to x=0.2x=0.2.