Exciton transfer between localized states in ZnO quantum well structures

The dynamics of photocreated excitons in a CdZnO/MgZnO quantum well (QW) was studied by comparing the experimental photoluminescence (PL) data with the results of Monte Carlo simulations of the exciton hopping. The temperature-dependent PL linewidth was found to be in reasonable agreement with the model of exciton hopping, with an additional inhomogeneous broadening (ΓΓ) accounted for. The simulation analysis revealed fluctuations of the band potential to be 20 meV with an additional inhomogeneous broadening of Γ=29meV, and a crossover from a non-thermalized to thermalized exciton energy distribution at about 100 K. In addition, a Bose–Einstein distribution like temperature dependence of the exciton energy in the wells was extracted using the data on the PL peak position.