The effect on the annealing temperature of Li doped ZnO thin film for a film bulk acoustic resonator

We investigated the material and electrical properties of Li doped ZnO thin film (ZLO) with variation of the annealing temperature. In the 500 ∘C sample, ZLO film showed well defined (002) cc-axis orientation and a full width half-maximum property of 0.25∘. The electrical properties of ZLO thin films showed the excellent specific resistance of 1.5×1011 Ω cm. Finally, the frequency characteristics of the ZLO thin film FBAR, according to the annealing temperature, showed improvement of the return loss from 24.48 to 30.02 dB at a resonant frequency of 1.17 GHz.