کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1555177 | 1513254 | 2007 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of a solution-processed thin-film transistor using zinc oxide nanoparticles and zinc acetate
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have fabricated a solution-processed ZnO thin-film transistor without vacuum deposition. ZnO nanoparticles were prepared by the polyol method from zinc acetate, polyvinyl pyrrolidone, and diethyleneglycol. The solution-processable semiconductor ink was prepared by dispersing the synthesized ZnO in a solvent. Inverted stagger type thin-film transistors were fabricated by spin casting the ZnO ink on the heavily doped Si wafer with 200Â nm thick SiO2, followed by evaporation of Cr/Au source and drain electrodes. After the drying and heat treatment at 600Â âC, a relatively dense ZnO film was obtained. The film characteristics were investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). In order to obtain the electrical properties of the solution-derived transistor, the on-off ratio, threshold voltage, and mobility were measured.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 42, Issues 1â6, JulyâDecember 2007, Pages 361-368
Journal: Superlattices and Microstructures - Volume 42, Issues 1â6, JulyâDecember 2007, Pages 361-368
نویسندگان
Sul Lee, Sunho Jeong, Dongjo Kim, Bong Kyun Park, Jooho Moon,