کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1555231 1513257 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Deep SiC etching with RIE
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Deep SiC etching with RIE
چکیده انگلیسی

SiC is currently an important topic in power devices. This new technology leads to lower power losses, faster switching, and higher working temperature. The design of SiC power devices requires the integration of edge termination techniques to obtain a high blocking voltage. The mesa structure approach is one well-established method. It could be used alone or in combination with a Junction Termination Extension (JTE). The mesa consists of a structure that removes material around the pn-junction. Due to the strong Si–C bonds, conventional chemical–wet etching solutions are inefficient on SiC, so plasma methods are required to etch SiC.The presented work is based on the use of an RIE reactor with an SF6/ O2 plasma. Its geometry structure and parameters were optimized. An etch rate of 0.35 μm/min was obtained without any trenching phenomenon. Trenches deeper than 10 μm deep were realized with a nickel etching mask that shows a high selectivity. AFM analysis revealed an etched surface as smooth as the initial one.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 40, Issues 4–6, October–December 2006, Pages 388–392
نویسندگان
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