Optical studies on a coherent InGaN/GaN layer

Photoluminescence (PL), photoluminescence excitation (PLE) and selective excitation (SE-PL) studies were performed in an attempt to identify the origin of the emission bands in a pseudomorphic In0.05Ga0.95N/GaN film. Besides the InGaN near-band-edge PL emission centred at 3.25 eV an additional blue band centred at 2.74 eV was observed. The lower energy PL peak is characterized by an energy separation between absorption and emission–the Stokes’ shift–(∼∼500 meV) much larger than expected. A systematic PLE and selective excitation analysis has shown that the PL peak at 2.74 eV is related to an absorption band observed below the InGaN band gap. We propose the blue emission and its related absorption band are associated to defect levels, which can be formed inside either the InGaN or GaN band gap.