کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1555270 1513257 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ni–Al ohmic contact to p-type 4H-SiC
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Ni–Al ohmic contact to p-type 4H-SiC
چکیده انگلیسی

Investigations on Ni/Al alloys to form ohmic contacts to p-type 4H-SiC are presented in this paper. Different ratios of Ni/Al were examined. Rapid thermal annealing was performed in argon atmosphere at 400 ∘C for 1 min, followed by an annealing at 1000 ∘C for 2 min. In order to extract the specific contact resistance, TLM test structures were fabricated. A specific contact resistance of 3×10−5 Ω cm2 was obtained reproducibly on Al2+ implanted p-type layers, having a doping concentration of 1×1019 cm−3. The lowest specific contact resistance value measured amounts to 8×10−6 Ω cm2.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 40, Issues 4–6, October–December 2006, Pages 626–631
نویسندگان
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