کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1555273 | 1513257 | 2006 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Al Schottky contact on p-GaSe
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Al Schottky contact on p-GaSe Al Schottky contact on p-GaSe](/preview/png/1555273.png)
چکیده انگلیسی
A new Schottky diode, Al/p-GaSe, was presented in this study. It shows an effective barrier height of 0.96 eV with an ideality factor of 1.24 over five decades and a reverse leakage current density of 4.12×10−7 A/cm2 at −2 V after rapid thermal annealing at 400 ∘C for 30 s. The generation–recombination effect of the Schottky diode was decreased as the annealing temperature was increased. The formation of Al1.33Se2 was observed by X-ray diffraction analysis after the diode was annealed at 400 ∘C for 30 s. Owing to the grains’ growth, the surface morphology of the 400 ∘C-annealed diode was rougher than that of the unannealed diode, which was observed both by the AFM and the SEM analysis.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 40, Issues 4–6, October–December 2006, Pages 644–650
Journal: Superlattices and Microstructures - Volume 40, Issues 4–6, October–December 2006, Pages 644–650
نویسندگان
Wen-Chang Huang, Shui-Hsiang Su, Yu-Kuei Hsu, Chih-Chia Wang, Chen-Shiung Chang,