کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1555325 | 1513258 | 2006 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Lattice sites of implanted Cu and Ag in ZnO
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The group Ib impurities Cu and Ag on substitutional Zn sites are among possible candidates for p-type doping of ZnO. In order to explore possible lattice sites of Cu and Ag in ZnO the radioactive impurities 67Cu and 111Ag were implanted at doses of 4Ã1012 cmâ2 to 1Ã1014 cmâ2 at 60 keV into ZnO single crystals. The emission channeling effects of βâ particles from the decay were studied by means of position-sensitive electron detectors, giving direct evidence that in the as-implanted state large fractions of Cu and Ag atoms (60%-70% for Cu and 30% for Ag) occupy almost ideal substitutional Zn sites with root mean square (rms) displacements of 0.014-0.017 nm. However, following vacuum annealing at 600 âC and above both Cu and Ag were found to be located increasingly on sites that are characterized by large rms displacements (0.03-0.05 nm) from Zn sites. We conclude that in high-temperature treated ZnO Cu and Ag are most likely not simply replacing Zn atoms but are incorporated in complexes with other crystal defects or as clusters.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 39, Issues 1â4, JanuaryâApril 2006, Pages 229-237
Journal: Superlattices and Microstructures - Volume 39, Issues 1â4, JanuaryâApril 2006, Pages 229-237
نویسندگان
U. Wahl, E. Rita, J.G. Correia, T. Agne, E. Alves, J.C. Soares, The ISOLDE Collaboration The ISOLDE Collaboration,