کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1606591 | 1516226 | 2016 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth AlxGa1âxN films on Si substrates by magnetron sputtering and high ammoniated two-step method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this paper, AlxGa1âxN films on Si substrates were synthesized with adjusting process parameters by magnetron sputtering and high ammoniated two-step method innovatively, while gallium oxide was used as gallium target, and aluminum was used as aluminum target, ammonia gas and nitrogen were used as nitrogen source. The influence of process parameters on the quality of AlxGa1âxN films was researched with X-ray diffraction (XRD), scanning electron microscope (SEM), and Energy Diffraction Spectrum (EDS) for the prepared samples. The results showed that AlxGa1âxN film can be grown on the Si substrate by magnetron sputtering and high ammoniated two-step method, and substrate temperature, sputtering power, nitrogen concentration also have a great impact on the quality of AlxGa1âxN film. The sample was developed along (002) peak preferred with high orientation at 200 °C. High-quality film could be grown when the x is 0.32 in AlxGa1âxN films grown in 300 °C substrate temperature, 150 W sputtering power and 50% nitrogen concentration conditions, which is used for gas sensitive sensor. And compared stress by the measurement of Raman with an excitation wavelength λ = 532 nm. The samples were tested by photoluminescence (PL), which indicated two light-emitting peaks at 405 nm and 645 nm when the excitation wavelength is 325 nm. The measure in Hall Effect Measurement System showed that the carrier concentration and mobility were changed with different Al components.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 667, 15 May 2016, Pages 346-351
Journal: Journal of Alloys and Compounds - Volume 667, 15 May 2016, Pages 346-351
نویسندگان
Xuewen Wang, Xingxing Su, Feng Hu, Lin He, Lewan He, Zhiyong Zhang, Wu Zhao, Kai-Ge Wang, Shuang Wang,