Photoelectrochemical properties of In2Se3 thin films: Effect of substrate temperature

• Photoelectrochemical properties of In2Se3 thin films.
• In2Se3 films are of n-type with Isc and Voc of 1.05 mA/cm2 and 261 mV respectively.
• Efficiency (η) and fill factor (FF) is found to be 0.71% and 0.51% respectively.
• Performance of cell can motivate further studies concerning solar energy conversion.

In2Se3 thin films have been deposited onto fluorine doped tin oxide coated (FTO) glass substrates at various substrate temperatures by spray pyrolysis. The photoelectrochemical cell configurations were In2Se3 thin film/1 M (NaOH + Na2S + S)/C. From capacitance–voltage (C–V) and current–voltage (I–V) characteristics; it is concluded that In2Se3 thin films are of n-type. The Fill factor (FF) and solar conversion efficiency (η) were calculated from photovoltaic power output characteristics. In this instance, the highest measured photocurrent density of 1.05 mA/cm2 and open circuit voltage of 261 mV is observed for film deposited at 350 °C resulting in maximum power conversion efficiency (η) and fill factor (FF) to be 0.71% and 0.51% respectively. Electrochemical impedance spectroscopy study shows that the In2Se3 film deposited at 350 °C shows better performance in photoelectrochemical cell. The performance of indium selenide thin film observed in our work can motivate further studies concerning solar energy conversion.

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