Tuning emission property of CdS nanowires via indium doping

Pure and doped CdS nanowires were synthesized by a convenient thermal evaporation method. SEM, XRD, TEM and EDS were used to examine the morphology, phase structure, crystallinity and composition. PL spectra were used to investigate emission properties of the as-prepared samples. We observe near band gap and trapped state emission in doped CdS nanowires while only near band gap emission in pure CdS nanowires. Moreover, the trapped state emission intensity increase with In dopant concentration and the emission color change from green to orange. The intensity of near band gap emission was too weak to be observed and only trapped state emission was detected when In concentration reach to 0.89%.

► Pure and indium doped CdS nanowires were synthesized successfully.
► Pure CdS nanowires show a sole near band gap green emission band.
► Doped CdS nanowires contain near band gap and deep level trapped state emission.
► The trapped state emission intensity increase with dopant concentration and only trapped state emission was detected when In concentration reach to 0.89%.
► The emission color change from green to orange in these nanowires.