Low temperature processed highly conducting, transparent, and wide bandgap Gd doped CdO thin films for transparent electronics

▶ The present manuscript entitled 'Low temperature processed highly conducting, transparent, and wide bandgap Gd doped CdO thin films for transparent electronics' is believed to be the first study on the structural, optical, and electrical properties of gadolinium doped CdO thin films. ▶ The effect of oxygen partial pressure on structural, optical, and electrical properties are studied. ▶ These (1 1 1) preferred oriented films are highly transparent. ▶ The optical bandgap of the films depends on oxygen partial pressure and varies from 3.0 eV to 3.4 eV. ▶ The lowest electrical resistivity and highest mobility of 2.71 × 10−5 Ω cm and 258 cm2/Vs, respectively, is observed. ▶ These low temperature processed high mobility and wide bandgap semiconducting films could be used for flexible optoelectronic and photovoltaic applications.