SnxSy compounds growth by controlled sulfurisation of SnO2

In this work, thin layers of semiconducting tin sulfide SnxSy compounds have been prepared by sulfrisation of tin oxide SnO2 on glass substrate. Structural studies showed that, depending on sulfur supply concentration, a mixture of SnS2 and Sn2S3 is obtained at an annealing temperature of 550 °C for 2 h. From the transmission and reflectance spectra, the extinction coefficient and refractive index were calculated as guides to understanding crystal growth kinetics. On the other hand, the exploitation of these optical measurements along with optothermal investigations showed that the electronic transitions in these layers were of allowed direct type and exhibit two gaps indicating the presence of two competent sulfide phases: SnS2 and Sn2S3.

Research highlights▶ Preparation of tin oxide SnO2 by a simple route. ▶ Obtaining a mixture of SnS2 and Sn2S3 at annealing temperature of 550 °C for 2 h. ▶ Giving an original and new guide to understand the crystal growth kinetics. ▶ Original conjoint (and never published) optical/optothermal investigations.