کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1627527 1516456 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Phase diagram of the CdGa2Se4−Bi2Se3 system and growth of CdGa2Se4 single crystals
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
Phase diagram of the CdGa2Se4−Bi2Se3 system and growth of CdGa2Se4 single crystals
چکیده انگلیسی

The phase diagram of the CdGa2Se4−Bi2Se3 system was investigated using phase X-ray diffraction, differential-thermal analysis and metallography. The system is of the eutectic type, and the coordinates of the eutectic point are ∼86 mol.% Bi2Se3 and 929 K. The CdGa2Se4 crystals were grown by the solution-melt method. An optimum solvent concentration of 45 mol.% was selected according to the constructed phase diagram. The grown crystals were orange, with an energy gap of 2.35 eV as estimated from the absorption edge.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 417, Issues 1–2, 29 June 2006, Pages 127–130
نویسندگان
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