کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1656615 1517595 2015 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Monitoring tantalum nitride thin film structure by reactive RF magnetron sputtering: Influence of processing parameters
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Monitoring tantalum nitride thin film structure by reactive RF magnetron sputtering: Influence of processing parameters
چکیده انگلیسی


• Monitoring of the structure of tantalum nitride thin films onto WC-6%Co using reactive RF magnetron sputtering
• Influence of process parameters on the stabilization of both hexagonal TaN to face centered cubic TaN structures
• Possible mechanism responsible for TaN structure stabilization considering adatom mobility on the substrate surface

Tantalum nitride thin films were deposited onto WC-6%Co substrates using reactive RF magnetron sputtering. Their structure and microstructure were studied and analyzed according to processing parameters. It has been demonstrated that the weight ratio of hexagonal TaN (h-TaN) to face centered cubic TaN (fcc-TaN) strongly depends on adatoms mobility on the substrate surface. In particular, growth conditions promoting adatoms mobility, i.e. low N2 partial pressure, total gas pressure, target-to-substrate distance as well as high target power density, promote the formation of h-TaN structure. Both exclusively fcc-TaN and exclusively h-TaN films were synthesized. A possible mechanism for the stabilization of those structures is discussed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 284, 25 December 2015, Pages 192–197
نویسندگان
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