کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1660583 1008406 2016 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Structural characterization of amorphous hydrogenated-carbon nitride (aH-CNx) film deposited by CH4/N2 dielectric barrier discharge plasma: 13C, 1H solid state NMR, FTIR and elemental analysis
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Structural characterization of amorphous hydrogenated-carbon nitride (aH-CNx) film deposited by CH4/N2 dielectric barrier discharge plasma: 13C, 1H solid state NMR, FTIR and elemental analysis
چکیده انگلیسی

The chemical composition and bond structure of polymer like amorphous hydrogenated carbon nitride (aH-CNx) thin films was studied by solid-state 13C and 1H MAS NMR spectroscopy, FTIR spectroscopy and elemental analysis. The hydrogenated CNx film was deposited on Si (100) substrate by CH4/N2 gas mixture dielectric barrier discharge (DBD) plasma. The broad 1H signals obtained even at 33 kHz spinning speed with spinning side bands indicates the existence of a large proton proportion in the film. The 1H and 13C signals are strongly broadened due to homo- and heteronuclear dipolar couplings and also due to amorphous nature of the deposited film. The local structure of the amorphous aH-CNx film is dominated by C–C and C–N single bonds i.e. carbon is mainly in the sp3 hybridized state. The Fourier Transform infrared (FTIR) spectroscopy of the film indicates the typical regions for –C≡N, –(CO), –NH, vibrations together with overlapping NH and OH stretching bonds. CH3 and C–N groups as well as species with CN conjugated double bonds are present in the deposited CNx film. From elemental analysis it is obtained that the composition of the film is (in wt.%): C: 61.8, H: 8.4, N: 17.7.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 203, Issue 14, 15 April 2009, Pages 2013–2016
نویسندگان
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