کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1789443 | 1524376 | 2016 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thin film growth of a topological crystal insulator SnTe on the CdTe (111) surface by molecular beam epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We report molecular beam epitaxial growth of a SnTe (111) layer on a CdTe template, fabricated by depositing it on a GaAs (111)A substrate, instead of BaF2 which has been conventionally used as a substrate. By optimizing temperatures for the growth of both SnTe and CdTe layers and the SnTe growth rate, we could obtain SnTe layers of the single phase grown only in the (111) orientation and of much improved surface morphology from the viewpoint of the extension and the flatness of flat regions, compared to the layers grown on BaF2. In this optimal growth condition, we have also achieved a low hole density of the order of 1017Â cmâ3 at 4Â K, the lowest value ever reported for SnTe thin films without additional doping. In the magnetoresistance measurement on this optimized SnTe layer, we observe characteristic negative magneto-conductance which is attributed to the weak antilocalization effect of the two-dimensional transport in the topological surface state.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 453, 1 November 2016, Pages 124-129
Journal: Journal of Crystal Growth - Volume 453, 1 November 2016, Pages 124-129
نویسندگان
Ryo Ishikawa, Tomonari Yamaguchi, Yusuke Ohtaki, Ryota Akiyama, Shinji Kuroda,