کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1789724 1524392 2016 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Direct MOVPE growth of semipolar (112¯2) AlxGa1−xN across the alloy composition range
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Direct MOVPE growth of semipolar (112¯2) AlxGa1−xN across the alloy composition range
چکیده انگلیسی


• (11–22) oriented semipolar AlGaN nitride layers grown across the composition range directly on m-sapphire substrates.
• Comprehensive structural characterization including discussion of phase-purity, surface morphology and epilayer tilt.
• Polarization-resolved optical transmission measurements show interesting valence band ordering properties.

We report a simple direct route for the synthesis of high-quality semipolar (112¯2) AlGaN alloys across the composition range by metalorganic vapour phase epitaxy. We show that a single high-temperature growth step without the use of a low-temperature nucleation or buffer layer is a convenient way to grow high-quality (112¯2) AlGaN layers on m-plane sapphire substrate. We also report a detailed investigation of the microstructure and optical properties of these layers including phase-purity, surface morphology, epilayer tilt, and polarization-resolved optical transmission measurements.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 437, 1 March 2016, Pages 1–5
نویسندگان
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