کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1789873 1524399 2015 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Tuning band gap and ferromagnetism in epitaxial Al-doped SnO2 films by defect engineering
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Tuning band gap and ferromagnetism in epitaxial Al-doped SnO2 films by defect engineering
چکیده انگلیسی


• The shift of PL emission due to lattice distortion is observed in Sn1−xAlxO2 films.
• The band gap is narrowed by holes induced by AlSn while widened by electrons.
• Air-annealing makes Al ions transformed from AlSn to Ali.
• The localized holes introduced by AlSn are responsible for the d0 ferromagnetism.

The role of acceptor and donor defects in epitaxial Al-doped SnO2 films were systematically investigated. Al doping introduces acceptor defects (AlSn) at low doping concentration while donor ones (Ali) in a concentration range from 8 to 10 at%. The band gap is firstly narrowed by hole-doping and then widened by electrons introduced by oxygen vacancies and Ali. Air-annealing absorbs oxygen and makes Al ions transformed from AlSn to Ali, corresponding to a decrease (increase) in the band gap when most Al ions occupy the substitutional (interstitial) sites. The saturation magnetization of the films is enhanced by AlSn doping, with the maximum value in the Sn0.98Al0.02O2 film. The magnetic moment is contributed by the localized holes introduced by AlSn. The existence of the ferromagnetism induced by holes in the film with oxygen vacancy gives a new insight into the behavior of defects in SnO2.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 430, 15 November 2015, Pages 75–79
نویسندگان
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