High rate InN growth by two-step precursor generation hydride vapor phase epitaxy

• High rate growth of InN by two-step precursor generation HVPE was investigated.
• Growth rate reached its maximum due to conversion of almost all InCl into InCl3.
• The growth rate of InN reached 12.4 μm/h at a growth temperature of 600 °C.
• Specular InN layers grown at 650 °C exhibited a sharp RT PL peak at 0.73 eV.
• InN grown at 650 °C exhibited a bulk electron concentration of 1.2×1018 cm−3.

The increase of InN growth rate by a newly developed two-step precursor generation hydride vapor phase epitaxy (HVPE) was investigated for the preparation of freestanding InN and InGaN substrates. An elevated growth rate was achieved by the complete conversion of InCl generated in the first source zone to InCl3 in the second source zone, by the supply of additional Cl2. The growth rate reached 12.4 μm/h at a growth temperature of 600 °C, and the rate was observed to decrease above this temperature. Specular InN layers grown at 650 °C exhibited a sharp room temperature photoluminescence peak at 0.73 eV with a bulk electron concentration of 1.2×1018 cm−3.