THM growth of (Cd, Mn)Te single crystal with the source ingot synthesized by VB method

• The (Cd, Mn)Te crystal was grown by the Traveling Heater method from the In doped source ingot.
• The In doped source ingot (Cd, Mn)Te had been synthesized by the Vertical Bridgman method.
• The Mn composition and In dopant distribute uniformly along the as-grown (Cd, Mn)Te ingot.
• The as-grown (Cd, Mn)Te possessed high crystalline quality.

The (Cd0.9, Mn0.1)Te crystal was grown by the Traveling Heater method (THM) from the indium-doped source ingot (Cd0.9, Mn0.1)Te which had been synthesized by the Vertical Bridgman (VB) method. The indium-doped (Cd0.9, Mn0.1)Te single crystal with the diameter of 31 mm and length of 130 mm was obtained. The variation of the Mn content was about ±1% along the length of (Cd, Mn)Te: In ingot, and the concentration of Te inclusions in the crystal was ~104 cm−3 with the average diameter of 8–12 μμm. Te solvent showed purifying effects during the THM crystal growth, and the indium dopant distributed along the crystal with the concentration of 6.8–10 ppm. IR transmittance and PL spectrum measurements revealed that the as-grown (Cd, Mn)Te crystal possessed high crystalline quality, and its resistivity was up to 6.2×109 Ω cm. Under the 59.5 keV 241Am irradiation, the planar (Cd, Mn)Te detector showed an energy resolution of 12.7%.