Modelling of X-ray diffraction curves for GaN nanowires on Si(1 1 1)

• The X-ray diffraction curves for GaN nanowires on Si(1 1 1) were calculated.
• Influence of GaN NW׳s mosaicity parameters on the XRD peak profiles was shown.
• Good correlation between experimental and calculated XRD curves was obtained.

X-ray diffraction curves and reciprocal space maps from self induced GaN nanowires on Si(1 1 1) substrates were examined theoretically and experimentally. Numerical simulation shows how distribution of such NWs parameters as diameter, length, strain and orientation influence broadening of X-ray diffraction peak profiles. Calculated shape of symmetric 0002 GaN reciprocal space map well correlates with experimental result, which indicates the validity of selected theoretical model.