Growth of InAs quantum dots on Si-based GaAs nanowires by controlling the surface adatom diffusion

• The influence of the nanowire density and substrate surface property on the formation of InAs quantum dots is investigated.
• High-density InAs quantum dots are grown on Si-based GaAs nanowires by reducing the nanowire density.
• A wetting layer of several nanometers is observed for the first time.
• Photoluminescence emission from the Si-based quantum dots is observed at room temperature.

InAs/GaAs dots-on-nanowire (NW) hybrid heterostructures are grown on Si substrate by metal organic chemical vapor deposition. The formation of InAs quantum dots (QDs) is intimately associated with the NW density as well as the substrate surface properties, both of which strongly affect the surface adatom diffusion. InAs QDs are realized with a short deposition time by reducing the NW density. The QDs exhibit specific facets and pure zinc blende structure, residing on a wetting layer of several nanometers. Photoluminescence emission from the QDs is observed at room temperature, with a linewidth of 186 meV. The results are promising for future integration of III–V NW hybrid devices, especially photovoltaic cells on Si.