A study on segregation layers of Bi4Si3O12 crystal grown by the Bridgman method

• Transparent Bi4Si3O12 crystal with a size of Φ25×100 mm3 was grown by the Bridgman method.
• Segregation layers observed in Bi4Si3O12 crystal present the features of growth facets.
• Segregation layers seriously decrease the scintillation properties of Bi4Si3O12 crystal.
• Suitable growth directions and slight Bi-rich melt are helpful to reduce segregation layers.

Bismuth silicate (Bi4Si3O12, BSO) crystals including and excluding segregation layers have been grown by the Bridgman method. The morphology and composition of segregation layers existing in the defective crystal were investigated, and the crystallization habit of BSO crystal was discussed. In order to grow large size BSO crystals, several growth techniques were suggested to restrain the segregation layers. The optical properties including transmittance, photoluminescence, X-ray excited luminescence spectra and light yield of BSO crystal were also measured and discussed in this paper.