Electroluminescence of GaNAs/GaAs MQWs p-i-n junctions grown by RF-MBE using modulated nitrogen radical beam source

► GaNAs/GaAs p-i-n junctions were successfully fabricated by RF-MBE. ► Clear rectification property was observed in I-V curves of the GaNAs/GaAs p-i-n junctions. ► Electroluminescence (EL) measurements showed different spectra to those of photoluminescence. ► EL intensities were almost proportional to the applied currents. ► Room temperature EL measurement revealed strong electron confinement of the GaNAs/GaAs MQW.