Molecular beam epitaxy growth of InSb1−xBix thin films

Molecular beam epitaxy growth for InSb1−xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are studied. Strong In and Ga inter-diffusion induced by Bi incorporation is observed and discussed.

► Molecular beam epitaxy growth for InSb1−xBix thin films on (100) GaAs substrates is reported.
► Bi incorporation for 2% is achieved.
► Up to 70% of the incorporated Bi atoms are at substitutional sites.
► Strong In and Ga inter-diffusion induced by Bi incorporation is observed.